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Purity:90wt%-COOH Content:2.73wt%OD: 1-2nmLength: 1-3μmSSA:380 m2/gASH: 5wt%Tap ...

Purity:60wt%OD: 1-2nmLength: 5-30μmSSA:407 m2/gASH: 5wt%Tap density: 0.14g/cm3Tr...

Purity:60wt%-OH Content: 3.96wt%OD: 1-2nmLength: 5-30μmSSA:407 m2/gASH: 5wt%Tap ...

Purity:60wt%-COOH Content: 2.73wt%OD: 1-2nmLength: 5-30μmSSA:407 m2/gASH: 5wt%Ta...

CNTs Preparation Technology:HiPCOPurity of SWCNTs:98wt%Diameter: 0.7-1.1nmLength...

CNTs Preparation Technology:ArcPurity of SWCNTs:95wt%Diameter: 1.2-1.6nmLength: ...

CNTs Preparation Technology:ArcPurity of SWCNTs:95wt%Diameter: 1.2-1.6nmLength: ...

CNTs Preparation Technology:HiPCOPurity of semiconductor SWCNTs:99wt%Diameter: 0...

CNTs Preparation Technology:HiPCOPurity of semiconductor SWCNTs:99.9wt%Diameter:...

CNTs Preparation Technology:ArcPurity of semiconductor SWCNTs:99.9wt%Diameter: 1...

CNTs Preparation Technology:HipcoPurity of metallic SWCNTs:90wt%Diameter: 0.8-1....

有序介孔碳-cmk-3 Ordered mesoporous carbon cmk-3類型：bet1000比表面積（平方米/克）：1000孔徑（納米）：5.57...

有序介孔碳-cmk-8 Ordered Mesoporous Carbon - cmk-8制備方法：模板法空間群：la3d比表面積（平方米/克）：720孔徑（納...

多孔碳 Porous Carbon密度（g/cm3）：~ 0.3粒徑（µm）（D50）：5或8灰分含量（%）：≤0.5%pH值：6.5-7.5表面積（...

無序介孔碳 Disordered Mesoporous制備方法：硬模板法合成比表面積（平方米/克）：600平均孔徑（納米）：50納米顆粒尺寸：1微米可逆容量（第...

氮摻雜有序介孔碳 N-Doped Mesoporous Carbon制備方法：硬模板氮摻雜的介孔碳 CMK-3平均尺寸：1 um碳/氮（原子）：4.3空間群：二...

羧基石墨烯水溶液 Carboxyl Graphene Water Dispersion直徑：1~5um厚度：0.8~1.2nm羧基比例：5%純度：99%

單層氧化石墨烯乙醇溶液 Single Layer Graphene Oxide Ethanol Dispersion制備方法：改良的H法濃度為5mg/mL 10...

單層氧化石墨烯水溶液 Single Layer Graphene Oxide Water Dispersion新產品：gno1w001制備方法：改良的H法濃度：...

Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D...