當前位置:泰州巨納新能源有限公司>>二維材料>>硒化物晶體>> 二硒化鉭晶體(99.995) 2H-TaSe2
GaTe 碲化鎵晶體 (Gallium Telluride)
供貨周期 | 現貨 | 應用領域 | 環保,化工,能源,綜合 |
---|
二硒化鉭晶體 2H-TaSe2 (Tantalum Selenide)
晶體尺寸:~10毫米
電學性能:Metal, Charge density waves (CDW) system at ~120K, Superconductor (Tc ~0.1K)
金屬,電荷密度波(CDW)
晶體結構:六邊形
晶胞參數:a = b = 0.342 nm, c = 1.255 nm, α = β = 90° , γ = 120°
晶體類型:合成
晶體純度:>99.995%
X-ray diffraction on a 2H-TaSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 2, 6, 8, 10
Powder X-ray diffraction (XRD) of a single crystal 2H-TaSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal 2H-TaSe2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal 2H-TaSe2. Measurement was performed with a 785 nm Raman system at room temperature.
請輸入賬號
請輸入密碼
請輸驗證碼
以上信息由企業自行提供,信息內容的真實性、準確性和合法性由相關企業負責,化工儀器網對此不承擔任何保證責任。
溫馨提示:為規避購買風險,建議您在購買產品前務必確認供應商資質及產品質量。