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GaTe 碲化鎵晶體 (Gallium Telluride)
| 供貨周期 | 現貨 | 應用領域 | 環保,化工,能源,綜合 |
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In2Se3 single crystals were grown using Physical vapor transport (PVT) as well as Bridgman technique. Unlike other In2Se3, the phase of this product is controlled carefully by after meticulous synthesis refinement steps and the flakes are highly crystalline. Alpha-phase is the most stable form of In2Se3 making it ideal for 2D research. Flakes are perfectly layered, in-plane sheets are perfectly aligned in the (002) direction as determined by XRD and 4-angle XRD (rocking curves). In the bulk, the crystals display 1.41 eV band gap and show strong Raman peaks.
Properties of In2Se3 layered crystals
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